PEEM / LEEM

PEEM / LEEM

LEEM III

Direct surface imaging microscope

System description:

The LEEM III system is highly compact and offers high scientific flexibility. The direct real-time imaging of crystal surfaces enables dynamic studies of growth, decomposition, melting, phase transition processes and diffusion on surfaces. The system is simple to use and, with its advanced computer control, easy to align. This enables users to make the most out of their research time.

The LEEM III can also be upgraded using several components to even expand its capabilities. A spin-polarized electron gun can be used for fast magnetic domain imaging with high lateral resolution.

The imaging energy analyzer can be added to resolve the kinetic energy of the photo-emitted electrons and perform XPEEM, e.g. with a He-plasma discharge light source (hv≈21 eV) or a focused laboratory X-ray source

Highlights:

  • Highest resolution (< 8 nm), best: 4.6 nm
  • LEEM, LEED, MEM, UV-PEEM, TEEM
  • Fast sample exchange
  • UHV in-situ crystal growth observation
  • Wide sample temperature range (~100 K to 1800 K)
  • Advanced computer control

Imaging examples:

LEEM IV

Electrostatic flange-on LEEM

System description:

This is the most compact LEEM and it is ideal for high level surface characterization. It can be used, for instance, as a surface characterization tool on x-ray beamlines at synchrotrons, thus providing high quality local structural information. Alternatively, it can be used as an advanced laboratory research tool to be combined with other research instruments, like STM/AFM, Infra-red, etc.

This flange-on microscope is very simple to use and can be adapted to existing vacuum chambers provided with their own manipulator.

Highlights:

  • Low cost
  • Ease of use
  • Full magnetic shielding
  • LEEM/LEED and PEEM modes computer controlled
  • Resolution < 20 nm
  • Field of view in LEEM mode 3-75 µm
  • Field of view in PEEM mode 3-85 µm

  • Imaging examples:

    LEEM V

    Direct surface imaging microscope

    System description

    The LEEM V system is highly compact and offers high scientific flexibility. The extra space around the main chamber, available thanks to the 90° sector field, allows flexible installation of evaporation or illumination sources. The direct real-time imaging of crystal surfaces enables dynamic studies of growth, decomposition, melting, phase transition processes and diffusion on surfaces. The system is simple to use and, with its advanced computer control, easy to align. This enables users to make the most out of their research time.

    The LEEM V can also be upgraded using several components to even expand its capabilities. The thermionic LaB6 electron gun is the standard source. Alternatively, a Schottky field emitter can be installed. A spin-polarized electron gun can be used for fast magnetic domain imaging with high lateral resolution.

    The imaging kinetic energy analyzer can be added to resolve the kinetic energy of the photo-emitted electrons, e.g. with a He-plasma discharge light source (hv≈21 eV) or a focused laboratory X-ray source.

    Highlights:

  • Highest resolution (< 8 nm), best: 4.6 nm
  • LEEM, LEED, MEM, UV-PEEM, TEEM
  • Fast sample exchange
  • UHV in-situ crystal growth observation
  • Wide sample temperature range (~100 K to 1800 K)
  • Advanced computer control
  • PEEM III

    Direct surface imaging microscope

    System description:

    The PEEM III system is an extremely simple, compact and productive instrument. Due to its straight column, the alignment takes only a few minutes so that students or users can focus on their research. The microscope is versatile and can host up to 8 evaporators or light sources. Its installation at a synchrotron can be very useful for high spatial resolution XAS measurements. Moreover, synchrotron measurements can be performed while growing a film. The installation, refill or exchange of evaporators requires only a short bake out and degassing of the evaporator filaments.

    Highlights:

    • Highest resolution (< 15 nm), best: 8.2 nm
    • UV-PEEM, TEEM
    • Extremely user friendly
    • Fast sample exchange
    • UHV in-situ crystal growth observation
    • Wide sample temperature range (~100 K to 1800 K)
    • Advanced computer control

    Imaging examples

    PEEM III with Analyzer

    System description:

    The PEEM III equipped with a 180° imaging energy analyzer is an extremely simple, compact and productive instrument. Straightforward alignment procedures reduce the preparation of a measurement to only a few minutes so that you, your students and users can focus on research. The microscope is versatile and can host up to 8 evaporators or light sources. Its installation at a synchrotron can be very useful for high spatial resolution XPEEM and XAS measurements. Furthermore, the full k-space can be directly acquired in a single image and dynamic band mapping can be performed. A great advantage of the Elmitec PEEM III with analyzer is that it is possible to make measurements at a synchrotron while growing a thin film. The installation, refill or exchange of evaporators requires only a short bake out and degassing of the evaporator filaments.

    Highlights:

    • Highest resolution (< 15 nm), best: 8.2 nm
    • XPEEM, UV-PEEM, TEEM
    • User friendly
    • Fast sample exchange
    • UHV in-situ crystal growth observation
    • Wide sample temperature range (~100 K to 1800 K)
    • Advanced computer control