Etching Systems

WHAT IS SPUTTERING?

Sputtering is a technique used to deposit thin films of a material onto a surface (a.k.a. "substrate"). By first creating a gaseous plasma and then accelerating the ions from this plasma into some source material (a.k.a. "target"), the source material is eroded by the arriving ions via energy transfer and is ejected in the form of neutral particles - either individual atoms, clusters of atoms or molecules. As these neutral particles are ejected they will travel in a straight line unless they come into contact with something - other particles or a nearby surface. If a "substrate" such as a Si wafer is placed in the path of these ejected particles it will be coated by a thin film of the source material.

Although SPUTTERING as described above seems relatively intuitive, familiarization with the following terms/concepts will give a more comprehensive understanding of this process:

Sometimes described as the "fourth state of matter" (the first three being solid, liquid, gas), a gaseous plasma is actually a "dynamic condition" where neutral gas atoms, ions, electrons and photons exist in a near balanced state simultaneously. An energy source (eg. RF, DC, MW) is required to "feed" and thus maintain the plasma state while the plasma is losing energy into its surroundings. One can create this dynamic condition by metering a gas (e.g. Ar) into a pre-pumped vacuum chamber and allowing the chamber pressure to reach a specific level (eg. 0.1 Torr) and introducing a live electrode into this low pressure gas environment using a vacuum feedthrough.

POWERING THE ELECTRODE WITH DCV WILL RESULT IN:

1. Ever present "free electrons" will immediately be accelerated away from the negatively charged electrode (cathode). These accelerated electrons will approach the outer shell electrons of neutral gas atoms in their path and, being of a like charge, will drive these electrons off the gas atoms. This leaves the gas atom electrically unbalanced since it will have more positively charged protons than negatively charged electrons - thus it is no longer a neutral gas atom but a positively charged "ion" (e.g. Ar +).

2.At this point the positively charged ions are accelerated into the negatively charged electrode (a.k.a. "cathode") striking the surface and "blasting" loose electrode material (diode sputtering) and more free electrons by energy transfer. The additional free electrons feed the formation of ions and the continuation of the plasma.

3.All the while, free electrons find their way back into the outer electron shells of the ions thereby changing them back into neutral gas atoms. Due to the laws of conservation of energy, when these electrons return to a ground state, the resultant neutral gas atom gas gained energy and must release that same energy in the form of a photon. The release of these photons is the reason the plasma appears to be glowing.

MAGNETRON SPUTTERING

WHAT IS A MAGNETRON SPUTTERING SOURCE?

MODULAR MAGNET ARRAY - MAGNETRON SPUTTER SOURCE

CONFOCAL SPUTTERING

A confocal sputtering system configuration is when multiple magnetron sputtering sources are arranged in a specific circular pattern and are aimed at a common focal point. When a substrate is placed in the vicinity of this focal point and rotated on its own axis, it is possible to deposit highly uniform single layers, multi-layers and co-deposited alloy films. It is an extremely popular technique for the following reasons:

• Exceptional deposition uniformity can be achieved on substrates twice the diameter of the source targets.
• Ability to easily control the growth of successive layers ranging in thicknesses from less than one atomic mono-layer to thousands of Angstroms.
• Minimizes time delay between subsequent layers since the substrate does not have to be re-positioned for each layer. In a con-focal multi-layer deposition, every source shutter opens about one second after the previous shutter has closed thereby keeping the deposited film surface on the substrate "in the plasma". This keeps the interface surface free from contamination by residual gas and prevents nucleation of the next layer material.
• Complete freedom to easily grow alloys of any number of materials in any ratio with precise control. This is ideal for combinatorial chemistry applications and for optimization of compound material target stoichiometries for production applications.
• The con-focal sputtering configuration is compact and maintains the substrate holder in an axial orientation. This allows for much more freedom and sophistication in substrate holder design and keeps overall costs down.
• For low deposition rate materials it is possible to boost the rate by running 2-3 targets of this material simultaneously from a single power supply.

IN-SITU TILT SOURCES IN A CONFOCAL SPUTTERING SYSTEM

In powerful R&D sputtering systems with the maximum level of flexibility, end users like to have the ability to operate at different "working distances" (distance between target and substrate). In order to maintain high deposition uniformity, the focal point of the magnetron sputtering sources must be variable by adjusting the source head angle. Also, the deposition profile of materials deposited with DC, with RF and with magnetic materials are all different, so the optimal angle for each material is not identical even if the working distance remains unchanged. 

In 1991 AJA International, Inc. invented the world's first UHV and HV magnetron sputter sources withIN-SITU TILT. Without breaking vacuum, each source head angle could be individually set with a precision micrometer to a specific angle. If removed for service or cleaning, it could be returned to the system and set to precisely the same angle - this is much more difficult to accomplish with manually adjustable, source head tilt assemblies. IN-SITU TILT combined with a load-lock on the sputtering system also saves a significant amount of time in performing quick test runs in succession to zero in on the optimal source angles. What can be done in a few hours on a system with load-lock and IN-SITU TILT can take weeks on a system with manual source head tilt since adjustment requires venting the chamber each time to reset the angle. Finally, IN-SITU TILT permits the user to tilt the source away from the substrate and grow "gradient" or "wedge" films which are popular in combinatorial chemistry applications.

DIRECT SPUTTERING

A direct sputtering system configuration is when the substrate is positioned or moving directly in front of and parallel to the magnetron sputtering source targets. As a rule, target diameters (or "lengths" as in the case of rectangular magnetron sputtering sources) should be about 20% to 30% larger than the substrate to achieve reasonable uniformity. For example a 100 mm wafer would require a 150 mm sputter target to achieve +/- 5% deposition uniformity. Although this configuration is much less flexible and generally more expensive than con-focal sputtering, it has its place in production applications which require maximum deposition rates (semiconductor wafer metallization), applications which utilize large substrates (e.g. flat panel displays) and a few techniques that demand "line-of-sight deposition" (e.g. "lift-off").

Utilizing a direct sputtering configuration for R&D is justified in certain instances, but often is chosen because it is what the researcher has "seen before". Like diode sputtering, this was the original sputter system configuration and "old habits die hard". It is important to clearly evaluate your needs before choosing between direct and con-focal deposition orientation.

 

 

WHAT IS ELECTRON BEAM (E-BEAM) EVAPORATION?

E-Beam evaporation is a physical vapor deposition (PVD) technique whereby an intense, electron beam is generated from a filament and steered via electric and magnetic fields to strike source material (e.g. pellets of Au) and vaporize it within a vacuum environment. At some point as the source material is heated via this energy transfer its surface atoms will have sufficient energy to leave the surface.  At this point they will traverse the vacuum chamber, at thermal energy (less than 1 eV), and can be used to coat a substrate positioned above the evaporating material.  Average working distances are 300 mm to 1 meter.  

Since thermal energy is so low, the pressure in the chamber must be below the point where the mean free path is longer than the distance between the electron beam source and the substrate. The mean free path is the average distance an atom or molecule can travel in a vacuum chamber before it collides with another particle thereby disturbing its direction to some degree.  This is typically around 3.0 x 10-4 Torr or lower.  

The main reason to run an e-beam evaporation process at the high end of the pressure range is to allow a wide beam ion beam source to be employed simultaneously for film densification or other property modification and wide beam ion beam sources do not typically operate below 1x10-4 Torr.  Evaporation without ion beam assist can be done at any pressure below this although the process always increases the pressure due to outgassing of some things within the vacuum chamber.  

Allowing evaporated atoms/molecules to traverse the working distance (between source and substrate) undisturbed by other residual atoms/molecules ensures "line of sight" arrival of material which is ideal when some type of masking is employed.  The low arrival energy is also advantageous for sensitive substrates, although the radiation from the intense electron beam energy transfer below the substrate would typically predominate.

ELECTRON BEAM EVAPORATION SOURCES

Single Pocket
electron beam evaporation system.
A water cooled copper block is bored out to have a "pocket" in the shape of an inverted, truncated, cone. Source material is placed within this pocket or within a crucible whose exterior fits squarely within the pocket. The crucible has a smaller, similar pocket within it.

A magnetic structure consisting of a permanent magnet and two pole extensions are located around the block such that its field lines run parallel to one side of the block.
On the the same side of the block (below these primary field lines) is a filament which produces electrons by thermionic emission and is formed into a beam - this is called the emitter assembly. This electron beam is "steered" by these field lines in a 270o arc to impinge on the center of the pocket. The electron beam's energy is controlled such that the magnetic field will bend it precisely into the center of the pocket.

An additional electromagnetic coil known as the "sweep coil" is employed to effectively raster the beam around the surface of the contents of the pocket to evenly heat the source material - this part of the operation is typically referred to "XY sweeping". A variety of sweep patterns are used in the control program for the electromagnetic coil. Materials with lower melting points melt readily and fill the crucible - they do not require an XY sweep. Materials with high melting points require an XY sweep to prevent the e-beam from "boring" a hole in the melt and subsequent "spitting" which creates large nodules of the source material in the growing thin film (undesirable).

Rotary Pocket
e-beam evaporation system
A rotary pocket electron beam source has all the same parts as a single pocket unit except that the water cooled copper block is essentially a turret of multiple pockets each of which can be indexed into position. With this design a number of different materials can be evaporated sequentially from a common magnet/emitter/sweep coil structure. Obviously this design includes additional shielding to prevent cross contamination of the source material in the pockets. The pocket in "position" is chosen via a motorized, rotary "indexer".

Linear Pocket
electron beam evaporation machine
A linear pocket electron beam source is similar to a rotary pocket source except that its pockets are arranged in a line and are indexed into position in a linear fashion within the common magnet/emitter/sweep coil structure.

 

WHAT IS THERMAL EVAPORATION?

Thermal Evaporation is one of the simplest of the Physical Vapor Deposition (PVD) techniques. Basically, material is heated in a vacuum chamber until its surface atoms have sufficient energy to leave the surface. At this point they will traverse the vacuum chamber, at thermal energy (less than 1 eV), and coat a substrate positioned above the evaporating material (average working distances are 200 mm to 1 meter).

The pressure in the chamber must be below the point where the mean free path is longer than the distance between evaporation source and the substrate. The mean free path is the average distance an atom or molecule can travel in a vacuum chamber before it collides with another particle thereby disturbing its direction to some degree. This is typically 3.0 x 10-4 Torr or lower. The main reason to run at the high end of the pressure range is to allow an ion beam source to be employed simultaneously for film densification or other property modification.

As a result of its simplicity, the cost of equipment ownership is also somewhat lower.

THERMAL EVAPORATION SOURCES
Resistive Boat or Coil.
A pair of high current vacuum feedthroughs are employed to flow a significant current (e.g. 300A) through a wide ribbon of refractory metal (e.g. tungsten, molybdenum) that has been pressed to have a large "dimple" on the top side into which pellets of the material are placed. As the current is increased, this thermal "boat" gets hotter and hotter until the pellets of material melt and eventually evaporate. As the evaporation process consumes energy, it is necessary to keep the current flowing to keep the evaporation process going. Increasing the current will increase the rate of evaporation and vice versa. It is also possible to utilize a coil made of a similar refractory metal. Source material is generally shaped into small horseshoe shapes and draped over the coil. As the source material heats and melts it "wets" the surface of the coil and subsequently evaporates in all directions. As a result, it directs its material less efficiently than the "boat" which only evaporates "up".

Knudsen Cell ("K" Cell), RadakTM Furnace and Custom Made Sources
Knudsen cells, Radak furnaces and other custom made thermal sources generally utilize a containment crucible which is surrounded or exposed to a controllable heat source such as a tungsten or tantalum resistance wire (coiled around the crucible), a resistive element or puck or even a quartz lamp. The crucible is heated in a controlled fashion utilizing a thermocouple sensor and a closed PID heater controller. The source material is thereby heated, melted and evaporates from the open end of the crucible and rate is increased or decreased with power input (~heating element temperature).

Crucible material chosen is based on its compatibility with the desired temperature, the material being evaporated and cost. Some designs incorporate a "cold lip" feature to keep evaporant from wetting and "creeping" up the inside wall of the crucible and spilling over to short out the heating element.

HIPIMS system

Description

The HIPIMS Reactor is a dual purpose deposition chamber. It allows accurate and reproducible thin film layer deposition and extensive plasma diagnostic investigation. It is configured to allow sputtering from both magnetic and non-magnetic target materials alike. The deposition process is fully programmable via dedicated PC software and PLC controller.

Specification

The reactor chamber is equipped with additional ports of various sizes for diagnostics and supplementary equipment. The three DN100CF ports located on the top of the chamber are occupied by the magnetron sources which are suitable for DC sputtering, RF/pulsed DC sputtering with both reactive and non reactive gases allowing for the deposition of both metallic and compound coatings. The top of the chamber can be mechanically lifted.

The supplementary ports can be used to mount:

•     additional gas dosing system,
•     pumping system,
•     load lock chamber,
•     manipulator,
•     RF Electrode,
•     vacuum gauge,
•     and various plasma diagnostic tools.

032 PRIMS

032 PRIMS is a simple and full functional sputter deposition system for reproducible thin film layers applying.

Magnetron sputtering sources (for metals and inorganics) are included, mounted in sputter-down configuration. System includes a turbomolecular pump with manual throttle valve. Small process chamber size allows to reach the base pressure in a short time. Dedicated deposition rate checking system is available.

▪ Compact size design
▪ Process chamber diameter: Ø 355 mm
▪ Ports for up to three 2" magnetron sources
▪ Internal shield against chamber contamination
▪ Base pressure range 10-7 mbar
▪ Fast turbo-molecular pumping system
▪ Substrate stage for up to 2" diameter samples
▪ Process chamber with in full size vacuum door for easy target or substrate replacement

Options:
▪ Substrate heating up to 600 °C
▪ Sample/substrate stage rotation
▪ Deposition rate measurement
▪ Co-deposition
▪ Process automation

 

Magnetron Sputtering System

System for research and development for thin film coating of substrate with different materials.

Deposition system prepared for planar and confocal „sputter down” arrangement and compatible with photolithographic lift-off process technology.

 

• Fully automated transferring and deposition process
• Process chamber with five DN 160CF ports for magnetrons, equipped with shields against cross contamination and vacuum door for quick and easy access to all components mounted in the chamber
• Base pressure: -7 mbar
• Substrate holder manipulator with 2 stations (for planar and confocal sputtering geometry). Stations are ready to carry up to 100 mm diameter wafers or 50x50 mm cylindrical substrates. Both stations have thermal stabilisation.
• Load lock/storage for up to 6 holders with easy access door

Sputter Deposition System

Sputter-down system equipped with 4 planar magnetron sputtering sources and easy access to top flange, bottom flange and substrate stage.

The loading and unloading process to and from the main chamber can be performed using a load-lock in combination with a linear transfer mechanism. The substrate holder manipulator is capable of holding, continuous rotating & cooling/heating samples with size of up to 4 inch (placed on 3-pins plate). The substrate stage is located at the bottom of the process chamber (sputter-down system) and allows heating the substrate to at least 650°C.

All relevant pneumatic, electronic, electromagnetic and motorized coomponents are controllable by a central control unit, comprising a programmable logic controller in combination with HMI device. Control software Synthesium allows for full control over process recipes and monitoring, manipulating all relevant subsystems.

• Base pressure: better than 10-8 mbar,
• Equipped with 4 planar magnetron sputtering sources in confocal sputter arrangement and ion source,
• Load-lock chamber with linear transfer for fast substrate holder introducing,
• Front door to process chamber,
• Top flange lifting mechanism (motorised and full protected) for easy changing the magnetron targets,
• Bottom flange with substrate manipulator fully accessible or replaceable using dedicated lifting trolley,
• Motorized substrate manipulator with heating and cooling possibility for 4” 3-pins plate,
• Innovative process automation software.

HIPIMS system

Description

The HIPIMS Reactor is a dual purpose deposition chamber. It allows accurate and reproducible thin film layer deposition and extensive plasma diagnostic investigation. It is configured to allow sputtering from both magnetic and non-magnetic target materials alike. The deposition process is fully programmable via dedicated PC software and PLC controller.

Specification

The reactor chamber is equipped with additional ports of various sizes for diagnostics and supplementary equipment. The three DN100CF ports located on the top of the chamber are occupied by the magnetron sources which are suitable for DC sputtering, RF/pulsed DC sputtering with both reactive and non reactive gases allowing for the deposition of both metallic and compound coatings. The top of the chamber can be mechanically lifted.

R & D MAGNETRON SPUTTERING SOURCES (HV AND UHV)

Stiletto Series HV Sources

• Stiletto Series Circular Sources 1"- 4"
  
• Stiletto Series Rectangular Sources
  
• End mounted - for tube coating
  
• Turrets and cluster flanges

A300 Series UHV Sources

• A300-XP UHV Sources 1.5"- 6"
  
• A310 1" UHV Sources
  
• CTM Series Sources
  
• Turrets and cluster flanges

A3CV Series UHV Sources

• Convertible target modules
  
• Specialty configurations

PRODUCTION MAGNETRON SPUTTERING SOURCES (HV)

STX & STXL Series Sources

• STX Series Circular Sources 5"-12"
  
• STXL Series Rectangular Sources 75mm x 300 mm to 150 mm x 1.0 m
  

Nautilus Rotating Magnet Sources

• Open magnet architecture flexibility for tailored uniformity optimization 

Cylindrical Target Sources

• For 360° immersion coating

Triangular Target Sources

• For 200 mm wafer batch coating

SPUTTERING TARGETS AND EVAPORATION MATERIALS

sputtering targets and evaporation materials to satisfy virtually any requirement. Targets and materials are available in a wide range of materials, sizes and purities. If the materials you are seeking are not listed, please call or email us your requirements as custom projects are our specialty.

Options & Materials

 

PLD system

Fully automated UHV system dedicated for PLD applications.

• Process chamber with base pressure better than 5x10-7 mbar. Allows for deposition of thin films on the substrate and their characterisation in-situ by RHEED methods. Main chamber contains ports for e.g. RHEED gun and screen, ion source, beam flux monitor, quartz balances, effusion cells, vacuum gauges, gas dosing system etc.
• 3-axes, motorised target manipulator with revolver mechanism with possiblity of holding up to 6 target holders. Dedicated to 1" target PTS holders.
• 5-axes, motorised substrate manipulator with heating up to 1200 °C or LN2 cooling (for 1" substrate PTS holders).
• 1-axis, motorised manipulator for wedge layers and masks.
• Load lock with linear transfer for fast and easy substrate/target holders introduction. Able to storage up to 8 PTS holders.
• Automatic gas dosing system for quick gas input.

The whole deposition process including transferring and positioning of substrate/target holders can be fully software controlled and automated using PREVAC's electronics and dedicated innovative Synthesium software.
System can be supplied in a standalone configuration or as part of a larger integrated research system.

PLD system

Description

Versatile Pulse Layer Deposition system for material screening of oxides and nitrides for photo(electro)catalysis.

Specification

The Prevac PLD System is a customized ultra high vacuum system designed for thin film deposition. The main component of the system is a UHV Chamber for PLD (Pulse Laser Deposition) in which material is evaporated by a high energy laser pulse incident upon the surface of ceramic (or metal) targets.

The PLD system is completed with free-standing electrical cabinets containing all the electronics for all system components, pumps and vacuum gauges.

The PLD system consists of turbo-molecular pumping systems with automatic control. The turbo-molecular pumping systems comprise turbo-molecular pump, fore vacuum pump (scroll pump), set of interconnecting bellows, set of valves (safety and vent), set of cables and corresponding microprocessor controlled electronics unit for automatic control of pumping and venting cycles.

The system is equipped with vacuum measuring instruments comprising full range vacuum gauges and capacitive gauge (installed on vacuum chambers), fore vacuum gauges (installed on fore vacuum lines), set of cables and corresponding electronics unit.

Illumination inside of the vacuum chambers is achieved via LED devices installed on the bolt heads of the chamber view ports.

Various different types of PTS sample holders are used for mounting and transferring samples inside the system. These can variously be heated and/or cooled.

Nitride MBE Systems

For over 10 years SVTA's Application Laboratory has been recognized as a world leader in the growth of III-Nitride materials, and a supplier of molecular beam epitaxy systems. SVTA Nitride MBE (Molecular Beam Epitaxy) Systems have been specifically designed to grow high quality GaN, AlN and related Nitride materials. The growth module is designed to handle harsh active nitrogen content and is equipped with a high temperature substrate heater for uniform growth. The active nitrogen species are generated by either a RF Plasma or Ammonia Source.

The base system consists of two modules: Epitaxy Growth Module and Load Lock/Buffer/Preparation Module. The Nitride MBE system comes standard in either a linear or right angle configuration; a "cluster tool" configuration is also available. While SVTA has a library of standard designs, we are always ready to discuss your unique requirements. Transfers to chambers for surface analysis or other analytical techniques are available.

Oxide MBE Systems

The SVTA Oxide MBE (Molecular Beam Epitaxy) system has been specifically developed to grow high quality superconducting films and metal oxide semiconducting materials. The growth module is designed to handle harsh active oxygen content and is equipped with an oxygen resistant substrate heater. The oxygen species are generated by either an  RF Plasma  or Ozone Delivery Source. The base molecular beam epitaxy system consists of two modules: Epitaxy Growth Module and Load Lock/Buffer/Preparation Module.

SVTA has standard and custom vacuum chambers which can incorporate multiple UHV Electron beam evaporators and effusion cells depending on your requirements. Transfers to chambers for surface analysis or other analytical techniques are available.

The oxide MBE system comes standard in either a linear or right angle configuration; a "cluster tool" configuration is also available.

III-V and II-VI MBE Systems

The SVTA-MBE35 molecular beam epitaxy system has been specifically designed to grow high quality compound semiconductor materials, with high carrier mobility and low defect densities on a range of substrate sizes. The modular system concept is a flexible and reliable way of adapting to different customer needs. It can be configured as an III-V MBE System, an II-VI MBE System, or for other materials. The base system consists of two modules: Epitaxy Growth Module and Load Lock/Buffer/Preparation Module. Each module has its own independent UHV pumping system and can be isolated from each other by a gate valve.

The system can be configured combining the use of solid and gas sources for deposition, including SVTA's Valved Sources and Cracking Sources. The flexibility of the MBE system configuration ensures that the system can be used for a wide variety of application and development purposes. It comes standard in either a linear or right angle configuration, or a "cluster tool" configuration with a central distribution chamber. Custom system configurations with multiple growth chambers (for example one for III-V MBE and another for II-VI MBE) are also available, as well as integration of analysis modules.

Silicon MBE Systems

The SVTA Silicon molecular beam epitaxy system has been specifically designed to satisfy the requirement of high quality growth of IV-IV materials and related Silicon semiconductor compounds. It is equipped with electron beam evaporation sources for silicon epitaxy, effusion cells and combines electronic sensor feedback to achieve highly reproducible thin films. The flexibility of the molecular beam epitaxy system configuration enables use of the system for a wide variety of application purposes. The base system consists of two modules: Epitaxy Growth Module and Load Lock/Buffer/Preparation Module. The system comes standard in either a linear or right angle configuration, or a "cluster tool" configuration with a central distribution chamber.

Metal Organic Systems

SVTA produces Metal-Organic Chemical Vapor Deposition systems (MO-CVD) for special applications such as UHV MO-CVD systems for nitride or III-V semiconductor deposition. These systems have been specifically developed to satisfy the requirements of high quality growth of materials using gaseous metal organic compounds. The advanced gas handling module provides precision control of high purity gas admitted to the system. A proprietary pressure control algorithm is used to minimize gas transients during growth. Gas line manifolds, gas line exhaust, purge and scrubbing facilities are enclosed within a safety gas cabinet for easy access and maintenance. The Metal-Organic Chemical Vapor Deposition system comes standard in either a linear or right angle configuration.

SVTA also provides reengineered MO-CVD systems as a cost effective solution.

MBE system

Stand-alone MBE sytem with fast intro chamber.
> Base pressure better than 2x10-10 mbar


> 4-axes manipulator with direct and e-beam heating up to 1200 °C and LN2 cooling


> Load lock with linear transfer for fast and easy flag style sample holders introduction

. Able to storage up to 6 holders.
> Process chamber contains ports for e.g. RHEED gun, ion gun, beam flux monitor, quartz balances etc.

The process chamber is equipped with additional ports for e.g. analysis instruments.

Radial Distribution Chamber (UFO)

The radial distribution chambers (UFO) are designed to transfer samples between multiple preparation and analysis chambers that are connected to it.

The chambers are normally mounted at the centre of a series of chambers, acting as a central distribution hub for cluster tools.

Features
• standard or telescopic transferring arm
• by rotating only one rotary feedthrough you can move the transfer arm in and out, rotate the sample holder around the arm axis, rotate the mechanism between transfer ports and lock/unlock the sample holder.
• chamber body diameters from 550 to 1200 mm (can be customized)
• configured with TSP and transfer mechanism with rack-and-pinion rotary motion feedthrough
• time to transfer between two chambers < 45 sec. (manual mode) - fast transfer time allows cold samples to stay cold (temperature rise also depends on initial temperature and heat capacity)
• fast & reliable drop-proof transfer of hot & cold samples
• up to 8 transfer positions to other UHV chambers with automatic sample positioning
• guaranteed base pressure: 10-11 mbar range after 48h of bakeout. 10-10 mbar during transferring
• numerous viewports
• equipped with UHV connecting flanges and additional ports for future versatility
• can be equipped with application matched vacuum pumps to achieve the best pressure range (e.g. turbo, ion, getter or titanium sublimation pumps)

Application
The transportation and rotating mechanism of the RDC chamber provides repeatable and accurate sample transfer to other chambers. The radial distribution chamber mechanism is a development of the linear rack-and-pinion transporter, where a single ended rack-and-pinion is precisely rotated by a precision rotary drive until it is aligned in a preset position at a radial port. Once locked into position, the same rotary drive transfers the rack out through the port.

Options
• R1 axis rotation (90° left, 90° right, 180°). Rotation is independent for each port.

Sample holders
Radial Distribution Chamber design allows to transfer a wide range of various sample holders:
• PTS, flag style, puck style, deposition or special design holders up to 8”
• with heating by direct, indirect or e-beam methods up to 2000°C
• with high cooling efficiency down to 4.8 K (LHe)
• dedicated for e.g. quartz balance, Faraday cup, high pressure reactors, powder materials, IR spectroscopy and many others

Technical data

Travelling flange	DN 63CF - DN 160CF
Viewport flange	DN 160CF
Chamber diameter	550 - 1200 mm (other on request)
Max transfer length Z	395 - 904, depends on chamber diameter, transferring arm and sample holder type (other on request)
Positional control	manual / semi-motorised (option) / motorised (option)
Bakeout temperature	up to 150°C

Transfer Length

Chamber diameter D [mm]	Maximum transfer length Z [mm]
	for PTS (1") sample holders	for flag style sample holders
550 telescopic	555	572
700 telescopic	780	797
700	395	414
750	444	463
800	493	512
900	591	610
1000	689	708
1200	885	904

Transferring Tunnel

Transferring tunnel is used to transfer samples between UHV chambers, in a stable and easy-to-operate way.

Up to 15 sample holders can be loaded and transferred via the dedicated sample holder trolley. The chamber is made of stainless steel and includes flanges for pump, viewports, gauges and valves. Guaranteed base pressure range 10-11 mbar after bakeout at 150 ºC.

Sample holders
A special transferring trolley is ready to contain up to 15 pcs of PTS or flag holders or 3 pcs of plate style holder.

Options
• R1 axis rotation (90° left, 90° right). Rotation is independent for each port.

Additional information
The movement of a special trolley is realized through linear magnetic drive and rail transfer inside tube. All motion elements: rotary feedthrough, drive belt with set of magnets, section motor, etc. are outside the vacuum in order to guarantee best vacuum performance and easy service. The trolley with 15 positions for sample holders is mounted in vertical position. The trolley switches its angular position in variable sections automatically, a solution which guarantees easy operation and smooth transferring into dedicated Radial Distribution Chamber. The linear motion is fully automatic, each section includes its own optical sensor and motor to guarantee completely independent movement of each section as well as high precision and full protection of the system. All motion elements are mounted outside the vacuum in order to guarantee the best vacuum performance and for ease of service. The fast entry load lock chamber mechanism is used for loading sample holder cassette.

Super resolution ARPES system with MBE chamber

Multi-technique photo emission UHV system for super resolution ARPES measurements with integrated MBE chamber.
System setup consists:
▪ Analysis chamber: base pressure 10-11 mbar range,
▪ Ultra high resolution photoelectron analyser with wide angle acceptance lens.
▪ PREVAC RMC50 monochromatic X-ray source
▪ High resolution and sensitivity LEED-AES spectrometer
▪ 5-axes manipulator with LHe cooling (open cycle) for analysis chamber
▪ MBE chamber: base pressure range 2x10-10 mbar
▪ 15kV electrostatic focused RHEED electron-source
▪ 4-axes manipulator with RES heating up to 1000 °C and LN2 cooling for MBE chamber
▪ Transferring system with load lock and storage chambers for 12 flag style sample holders
▪ Additional equipment: ion source IS 40C1, flood source FS 40A1, effusion cells, electron beam evaporator EBV 40A1, quartz balance QO 40A1 and others.

Analytical UHV system integrated with MBE chamber

Description

A analytical UHV system dedicated for investigation of the chemical and physical properties of solid state surfaces in UHV conditions integrated with MBE chamber.

Specification

- Analysis chamber with base pressure range 5*10-11 mbar, made from mu-metal which guaranteed residual magnetic field lower than 0,5 microTesla.
- Load Lock chamber allows loading up to three 2’’ PTS sample holder
- Special design MBE chamber equipped with:

• High precision 2-axis manipulator with stage for 2’’ holders with heating module for 3’’ heater and water shield around (heating up to 1000°C – oxygen compatible)
• Ports for 10 sources
• 10 x electro-pneumatic shutters dedicated for sources
• Deposition rate measurement system: Quartz Balance and Thickness monitor
• Beam Flux Monitor
• Additional free ports for other components in future
• The deposition process is fully programmable via dedicated PC software and PLC controller.

- Radial distribution chamber (UFO) for transferring the samples are transferred between chambers under UHV pressures
- Accessories:

• Set of dedicated sample holders
• Special rack for all electronics unit
• Special design bakeout system

Transferring system for 2’’ PTS Sample holder.

Multichamber XPS UHV system

Description

Multichamber UHV system dedicated to surface analysis of solid and powder samples by electron spectroscopy techniques:

• X-ray Photoelectron Spectroscopy (XPS)
• Ultraviolet Photoemission Spectroscopy (UPS)
• Auger Electron Spectroscopy (AES)
• Scanning Probe Microscopy (SPM)
• Low Energy Electron Diffraction (LEED)
• Temperature Programmed Desorption (TPD)
• Solution allow to have one sample holder type in all chambers.

The system consists of:

• Spectroscopy chamber with analyzer (incl. instrumentation and software) which allows to use XPS, UPS, AES, EPS techniques. The analyzer enable XPS measurement with high resolution, precise and depth profiling on selected surface <= 1x1mm, possibility of chemical imaging and angular-resolved measurement
• Variable temperature STM/AFM chamber with instrumentation and software which is dedicated to atomic resolution measurements
• Preparation chamber dedicated to preparing samples, equipped with AES/LEED spectrometer and thermal desorption spectrometer with residual gas analyzer (incl. instrumentation and software). Moreover is equipped with thermal and electron bombardment sources for thin film production scrapping tool and ion source for surface cleaning. The chamber is equipped with manipulator XYZ,
• Rotation tilt which allow to cool the samples down to 90°K and heat the samples to2200°K.

Moreover the system is equipped with:
Sample loading, transferring and storage system, Equipment for sample preparing and cleaning. UHV Flow Through High Pressure Reactor. Gas dosing system, pressure and temperature measurement and control system, vacuum controlling system. Sample temperature measurement and control system. Sample loading, prepare for UHV suitcase using, Unique Radial Distribution Chamber system with extremely easy handling solution. Storage chamber with heating and cooling possibilities. High pressure reactor for thermal / pressure processes in range up to 20 bar and 650°C. Solution with extremely short time heating in high pressure and UHV.